Light-emitting element and light-emitting device comprising the same

ABSTRACT

A light-emitting device includes a light-emitting element having a first electrode and a second electrode, a carrier, a first contact and a second contact. The first contact is arranged on the carrier and is electrically connected to the first electrode. The second contact is arranged on the carrier and is electrically connected to the second electrode. The first contact has a contour similar with that of the first electrode. The second contact has a contour similar with that of the second electrode.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation application of U.S. patentapplication Ser. No. 16/232,297, filed on Dec. 26, 2018, which claimspriority of Taiwan Patent Application No. 106145576 filed on Dec. 25,2017 and Taiwan Patent Application No. 107146875 filed on Dec. 25, 2018the entirety of which is incorporated by reference herein.

TECHNICAL FIELD

The present disclosure relates to a light-emitting device, and morerelate to a light-emitting device having an electrode and a contacthaving a contour similar with that of the electrode.

DESCRIPTION OF THE RELATED ART

The light-emitting diode (LED) used in the solid-state lighting devicehas the characteristics of low power consumption, long operating life,and small volume, so the LED gradually replaces the traditional lightingsource.

The LED can be attached to a carrier by a conductive material (forexample, solder) to form a light-emitting device. However, the positionof the LED may be shifted during the manufacturing process because theconductive material might flow during the curing process. Therefore, theLED cannot be arranged on the correct position.

The light-emitting device mentioned above can include a sub-mount and asolder on the sub-mount to fix the LED on the sub-mount. The LED can beelectrically connected to the circuit on the sub-mount. The sub-mountcan be a lead frame or a mounting substrate.

SUMMARY OF THE DISCLOSURE

The following description illustrates embodiments and together withdrawings to provide a further understanding of the disclosure describedabove.

A light-emitting device includes a light-emitting element having a firstelectrode and a second electrode, a carrier, a first contact and asecond contact. The first contact is arranged on the carrier and iselectrically connected to the first electrode. The second contact isarranged on the carrier and is electrically connected to the secondelectrode. The first contact has a contour similar with that of thefirst electrode. The second contact has a contour similar with that ofthe second electrode.

The light-emitting device includes a light-emitting element, a carrier,a first contact, and a second contact. The light-emitting element has afirst electrode having a first contour and a second electrode surroundedby the first electrode. The second electrode has a second contourdifferent from the first contour. The first contact is formed on thecarrier and is electrically connected to the first electrode. The secondcontact is formed on the carrier and is electrically connected to thesecond electrode. The second contact has a third contour.

The light-emitting device includes a light-emitting element, a carrier,a first contact, a second contact. The light-emitting element has afirst electrode having a first contour, a second electrode surrounded bythe first electrode and having a second contour, and a first insulationportion arranged between the first electrode and the second electrodeand having a fourth contour. The first contact is formed on the carrierand is electrically connected to the first electrode. The second contactis formed on the carrier and is electrically connected to the secondelectrode. The second contact has a third contour having a dimension notlarger than a dimension of the fourth contour.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a cross-sectional view of a light-emitting element inaccordance with an embodiment of the present disclosure.

FIG. 2 shows a bottom view of a light-emitting element shown in FIG. 1.

FIG. 3 shows a cross-sectional view of a light-emitting element inaccordance with an embodiment of the present disclosure.

FIG. 4 shows a top view of a carrier shown in FIG. 3.

FIG. 5 shows a cross-sectional view of a light-emitting element inaccordance with an embodiment of the present disclosure.

FIG. 6 shows a bottom view of a light-emitting element shown in FIG. 5.

FIG. 7 shows a cross-sectional view of a light-emitting element inaccordance with an embodiment of the present disclosure.

FIG. 8 shows a top view of a carrier shown in FIG. 7.

FIG. 9 shows a cross-sectional view of a light-emitting element inaccordance with an embodiment of the present disclosure.

FIG. 10 shows a top view of the light-emitting element shown in FIG. 9.

FIG. 11 shows a cross-sectional view of a light-emitting element inaccordance with an embodiment of the present disclosure.

FIG. 12 shows a top view of the carrier shown in FIG. 11.

FIG. 13 shows a bottom view of a light-emitting element in accordancewith an embodiment of the present disclosure.

FIG. 14 shows a cross-sectional view of a light-emitting element inaccordance with an embodiment of the present disclosure.

DETAILED DESCRIPTION OF THE EMBODIMENTS

The drawings illustrate the embodiments of the application and, togetherwith the description, serve to illustrate the principles of theapplication. The same name or the same reference number given orappeared in different paragraphs or figures along the specificationshould has the same or equivalent meanings while it is once definedanywhere of the disclosure. The thickness or the contour of an elementin the specification can be expanded or narrowed.

FIG. 1 shows a cross-sectional view of a light-emitting element inaccordance with an embodiment of the present disclosure. Referring toFIG. 1, the light-emitting element 10 has a semiconductor stack 2, afirst electrode 40, and a second electrode 42. The first electrode 40and the second electrode 42 are physically separated from each otherwithout being contacted with each other. For example, the firstelectrode 40 is not overlapped with the second electrode 42. In anotherembodiment, the first electrode 40 is overlapped with the secondelectrode 42 with an insulation layer formed therebetween. In anotherembodiment, an insulation portion (not shown) is formed between thefirst electrode 40 and the second electrode 42. The semiconductor stackhas a first conductive type semiconductor layer (not shown), a secondconductive type semiconductor layer (not shown), and a light-emittinglayer (not shown) arranged between the first conductive typesemiconductor layer and the second conductive type semiconductor layer.The light-emitting layer emits incoherent light. The first conductivetype semiconductor layer is electrically connected to the firstelectrode 40, and the second conductive type semiconductor layer iselectrically connected to the second electrode 42.

The first conductive type semiconductor layer and the second conductivetype semiconductor layer can be cladding layer or confinement layerwhich provides electrons and holes respectively to be recombined for theactive layer to emit a light. The material of the first conductive typesemiconductor layer, the light-emitting layer, and the second conductivetype semiconductor layer can be III-V semiconductor materials, such asAl_(x)In_(y)Ga_((1-x-y))N or Al_(x)In_(y)Ga_((1-x-y))P, wherein 0≤x, y≤1and (x+y)≤1. The light-emitting element 10 can emit a red light having apeak wavelength between 610 nm and 650 nm, a green light having a peakwavelength between 530 nm and 570 nm, or a blue light having a peakwavelength between 450 nm and 490 nm.

The material of the electrodes 40, 42 can be metal, such as titanium(Ti), nickel (Ni), gold (Au), platinum (Pt) or aluminum (Al). In anembodiment, the electrode 40, 42 can be a multi-layer structure having astack of Ti/Al/Ni/Al/Ni/Al/Ni/Au, Ti/Al/Ti/Al/Ni/Au, orTi/Pt/Al/Ni/Al/Ni/Au, wherein the Ti stands for a titanium metal layer,Ni stands for a nickel metal layer, Au stands for a gold metal layer, Ptstands for a platinum metal layer, and Al stands for an aluminum metallayer. The gold metal layer is arranged to be the bottommost layer inthe stack for directly connection with an external element.

Optionally, the light-emitting element 10 has a wavelength conversionmaterial (not shown) covering the semiconductor stack 2. The wavelengthconversion material absorbs and converts a first light from thesemiconductor stack 2 to be a second light having a peak wavelength or adominant wavelength different from that of the first light. The materialof the wavelength material can be quantum dot material, yellow-greenphosphor, red phosphor or blue phosphor. The material of theyellow-green phosphor can be YAG, TAG, citrate, vanadate, alkaline earthmetal selenide, or metal nitride. The material of the red phosphor canbe fluoride (for example, K₂TiF₆:Mn⁴⁺ or K₂SiF₆:Mn⁴⁺), citrate,vanadate, alkaline earth metal sulfide, metal oxynitride or a mixture oftungstate and molybdate. The material of the blue phosphor can beBaMgAl₁₀O₁₇:Eu²⁺. In an embodiment, the first light and the second lightare mixed to be white light. The white light has a color coordinate(x,y) on the CIE 1931 chromaticity diagram, wherein the 0.27≤x≤0.285,and 0.23≤y≤0.26. In an embodiment, the white light has a colortemperature in a range between 2200K˜6500K (for example. 2200K, 2400K,2700K, 3000K, 5700K, 6500K) and a color coordinate (x,y) locates withinan area of 7 MacAdam ellipse on the CIE 1931 chromaticity diagram. In anembodiment, the first light and the second light are mixed to benon-white light, for example, red light, amber light, violet light oryellow light. In an embodiment, all or most of the first light isconverted to the second light.

The quantum dot material has a core and a shell. The material of thecore and the shell can be different. The material of the shell has anenergy band gap higher than that of the material of the core to avoidexcessive electrons dissipated from the core while emitting lightrepeatedly and to avoid the declination of the intensity of the lightfrom the quantum dot material. The material the core can be zinc sulfide(ZnS), zinc selenide (ZnSe), zinc telluride (ZnTe), zinc oxide (ZnO),cadmium sulfide (CdS), cadmium selenide (CdSe), cadmium telluride.(CdTe), gallium nitride (GaN), gallium phosphide (GaP), gallium selenide(GaSe), gallium antimonide (GaSb), gallium arsenide (GaAs), aluminumnitride (AlN), aluminum phosphide (AlP), aluminum arsenide (AlAs),indium phosphide (InP), indium arsenide (InAs), tellurium (Te), leadsulfide (PbS), indium antimonide (InSb), lead telluride (PbTe), leadselenide (PbSe), antimony telluride (SbTe), zinc cadmium selenide(ZnCdSe), zinc cadmium selenide sulfide (ZnCdSeS), and copper indiumsulfide (CuInS). The material of the core should match the material ofthe shell. For example, the lattice constant of the core is matched withthe lattice constant of the shell. In addition, the material of theshell should be able to form a high energy band gap area around the coreto increase quantum yield. In order to satisfy both properties at thesame time, the structure and/or the composition of the shell can bemodified to lower the stress between the core and the shell and toincrease the energy band gap. The structure of the shell can be a singlelayer, a multilayer or a structure having a gradually variedcomposition. In an embodiment, the core is CdSe and the shell has aninner portion having ZnCdSeS and an outer portion having ZnS. In anotherembodiment, the core is CdSe and the shell has an inner portion havingZnCdSeS, an outer portion having ZnS and a middle portion having agradually varied composition of Zn_(0.25)Cd_(0.75)S/Zn_(0.5)CdS/Zn_(0.75)Cd_(0.25)S.

In an embodiment, the light-emitting element 10 has a carrier to supportthe light-emitting layer. In an embodiment, the carrier is a growthsubstrate for epitaxial growth. The material of the substrate can besapphire, GaN, Si, or SiC. It is suitable to form III-V or II-VIsemiconductor materials on the epitaxial growth substrate by theepitaxial growth technology, and the semiconductor materials can be usedas light-emitting layer. In another embodiment, the carrier is not agrowth substrate for growing the light-emitting layer and is used as asupport element for changing or supporting the growth substrate. Thesupport element can be a structure having a material, a composition or acontour different from that of the growth substrate.

FIG. 2 shows a bottom view of a light-emitting element 10 shown inFIG. 1. The first electrode 40 has a contour similar with that of thesecond electrode 40. The first electrode 40 and the second electrode 42are symmetrically arranged with respect to a virtual line LO withoutbeing overlapped with the virtual line LO. The virtual line LO is animaginary line for illustrative purpose and can't be seen by human eye.The virtual line LO is overlapped with the geometric center (not shown)of the light-emitting element 10. Referring to FIG. 2, the contour ofthe semiconductor stack 2 and that of the light-emitting layer within(not shown) are rectangular. The light-emitting layer provides arectangular light field. In an embodiment, the shortest distance betweenthe first electrode 40 and the second electrode 42 is larger than 150μm.

FIG. 3 shows a cross-sectional view of a light-emitting device inaccordance with an embodiment of the present disclosure. Referring toFIG. 3, the light-emitting device 1000 has a semiconductor stack 2, afirst electrode 40, a second electrode 42, conductive layers 101 and102, a first contact 400, a second contact 420, and a carrier 300. Thecarrier 300 has circuit (not shown) to be electrically connected to thefirst electrode 40 and the second electrode 42. The external powersource can provide electricity through the conductive layers 101, 102and the electrodes 40, 42 to the light-emitting device 1000 to emit alight. Referring to FIG. 4, FIG. 4 shows the positions of the conductivelayers 101 and 102 on the carrier 300 shown in FIG. 3, and thesemiconductor 2, the first electrode 40, and the second electrode 42 areomitted. The first contact 400 and the second contact 420 are arrangedon the top surface of the carrier 300 and are electrically connected tothe semiconductor stack 2 through the conductive layers 101 and 102. Thecontours of the conductive layers 101, 102 on the first contact 400 andthe second contact 420 can be different, and the conductive layers 101,102 are arranged on the first contact 400 and the second contact 420asymmetrically with respect to the virtual line LO. Alternatively, thefirst contact 400 has a contour similar with that of the second contact420, and the first contact 400 and the second contact 420 aresymmetrically arranged with respect to a virtual line LO withoutoverlapping with the virtual line LO. The first contact 400 has acontour similar with that of the first electrode 40, and the secondcontact 420 has a contour similar with that of the second electrode 42.The first contact 400 and the second contact 420 are electricallyconnected to the circuit (not shown) on the carrier 300. The conductivelayer 101 is electrically connected to the first electrode 40 and thefirst contact 400. The conductive layer 102 is electrically connected tothe second electrode 42 and the second contact 420. The semiconductorstack 2 is fixed on the carrier 300. It is noted that the conductivelayers 101, 102 are contacted with the first contact 400, the secondcontact 420 and the region on the carrier 300 not covered by the firstcontact 400 or the second contact 420. The adhesion strength between theconductive layers 101 and the first contact 400 and the adhesionstrength between the conductive layer 102 and the second contact 420 arelarger than that between the conductive layer 101, 102 and the region onthe carrier 300 not covered by the first contact 400 or the secondcontact 420. Good adhesion between the conductive layers 101, 102 andthe contacts 400, 420 can avoid the conductive layers 101, 102 fromaggregating on the region of the carrier 300 that is not covered by thefirst contact 400 or the second contact 420 during the manufacturingprocess. So, the open circuit between the semiconductor stack 2 and thecarrier 300 resulted from the absence of the conductive layers 101, 102on the first contact 400 or on the second contact 420 can be avoided.Besides, good adhesion also prevents the conductive layer 101, 102 frompeeling off from the first contact 400, the second contact 420 or thesurface of the carrier 300. Furthermore, the light-emitting element 10and the conductive layers 101, 102 are prevented from being separatedfrom the carrier 300. In an embodiment, the shortest distance betweenthe first contact 400 and the second contact 420 is larger than 150 μm.

FIG. 4 shows a top view of a carrier shown in FIG. 3. Referring to FIG.4, the first contact 400 (or the second contact 420) has a branchportion (region A) and a body portion (region B). During manufacturing,the conductive material is arranged to cover the first contact 400 andthe second contact 420. The conductive material may be solder or otheradhesive material having conductive properties. The light-emittingelement 10 is pressed and fixed on the first contact 400 and the secondcontact 420, and the conductive material is cured to be the conductivelayers 101, 102. It is noted, during the process of pressing thelight-emitting element 10, the amount of the conductive material on thefirst contact 400 and the amount of the conductive material on thesecond contact 420 can be different, and the pressure on the firstcontact 400 and the pressure on the second contact 420 can be differentbecause of the difference between the roughness on the first contact 400and the roughness on the first contact 420. Then, the conductivematerial on the first contact 400 and/or on the second contact 420 flowsand the contours of the conductive layer 101 and the conductive layer102 are different as shown in FIG. 4. So, considering that the adhesionstrength between the conductive material and the first contact 400 andthe adhesion strength between the conductive material and second contact420 are larger than adhesion strength between the conductive materialand the carrier 300, each of the first contact 400 and the secondcontact 420 is designed to have a region A and a region B in thisembodiment. The structure allows the conductive material to flow on theregion with larger adhesion strength (for example, the region A and/orthe region B), and not to flow around the region with smaller adhesionstrength (for example, the surface of the carrier 300 not covered by thefirst contact 400 or by the second contact 420). So, the conductivematerial (or the conductive layer 101, 102) is kept between the firstcontact 400 and the electrode 40 and between the second contact 420 andthe electrode 42.

It is noted that the maximum width of the branch portion (region A) issmaller than the maximum width of the body portion (region B). In otherwords, the branch portion contains less conductive material than thebody portion does. So, the short circuit formed between the contact 400and the contact 420 by the conductive material is avoided. At the sametime, the short circuit formed between one electrode of thelight-emitting element 10 (for example, the first electrode 40 or thesecond electrode 42) and the two contacts (for example, the firstcontact 400 and the second contact 420) is less likely to happen, eventhe position of the light-emitting element 10 is shifted caused by theexcessive conductive material.

The conductive material can be solder or anisotropic conductive paste(ACP). The anisotropic conductive paste has conductive paste, such as apaste having micro-tin ball or an ultra-fine pitch fixed array ACP. Thepaste having micro-tin ball can be particle-aligned anisotropicconductive film (PAL-ACF), Anisotropic Conductive film (ACF), SelfAssembly Anisotropic Conductive Paste (SAP), or epoxy solder pate.

FIG. 5 shows a cross-sectional view of a light-emitting element inaccordance with an embodiment of the present disclosure. Thelight-emitting element 20 has a semiconductor 2 and an electrode portion6. The electrode portion 6 has a first electrode 60, a second electrode62, and a first insulation portion 61 between the first electrode 60 andthe second electrode 62. The details of the semiconductor 2 can bereferred to relevant sections disclosed above and are omitted forbrevity. The electrode portion 6 is protruded from the semiconductor 2and has a substantially flat surface on the side away from thesemiconductor 2. FIG. 6 shows a bottom view of a light-emitting elementshown in FIG. 5. Referring to FIG. 6, the electrode portion 6 has arectangular contour. The contours of the second electrode 62 and thefirst insulation portion 61 surrounding the second electrode 62 in aplane view shown in FIG. 6 are circles. The circles form a concentricstructure. The concentric structure has a center C1 in a plane viewshown in FIG. 6. The first electrode 60, the second electrode 62 and thefirst insulation portion 61 are protruded from the semiconductor stack 2and have substantially flat outer surfaces being coplanar with eachother for electrically connection with external elements. The height ofthe first electrode 60, the height of the second electrode 62 and theheight of the first insulation portion 61 are substantially the same. Inan embodiment, the center C1 of the second electrode 62 is overlappedwith the geometric center of the light-emitting element 20. The secondelectrode 62 has a radius R1 measured from the center C1, and the firstinsulation portion 61 has a radius R2 measured from the center C1. Thefirst electrode 60 and the second electrode 62 are physically separatedfrom each other by the first insulation portion 61. The first electrode60 and the second electrode 62 are not contacted with each other oroverlapped with each other. The first electrode 60 and the secondelectrode 62 are electrically connected to semiconductor layers ofdifferent conductive types in the semiconductor stack 2 respectively.The first insulation portion 61 surrounds the second electrode 62 andhas a similar contour compared with the second electrode 62. In anembodiment, the first insulating portion 61 has a similar contourcompared to the second electrode 62, such as a circular shape or anelliptical shape. In another embodiment, both of the contour of thefirst insulating portion 61 and that of the second electrode 62 can be aquadrangular shape, a triangular shape, a polygonal shape, or a closedcurve shape. Referring to FIG. 6, the contour of the first electrode 60is similar to that of the semiconductor stack 2, and the outer edge ofthe first electrode 60 is not overlapped with that of the semiconductorstack. The light-emitting element 20 has a rectangular contour. Thecontours of the light-emitting stack 2 and that of the light-emittinglayer (not shown) within the light-emitting stack 2 are similar withthat of the light-emitting element 20. That is, the contours of thelight-emitting stack 2 and that of the light-emitting layer (not shown)are rectangular. In an embodiment the narrowest width of the firstinsulation portion 61 is larger than 150 μm to avoid the short circuitresulted from the overlap of the first electrode 60 and the secondelectrode 62 during manufacturing.

The material of the first insulation portion 61 can be oxide, nitride orpolymer. The oxide can be silicon oxide (SiO_(x)), titanium oxide(TiO_(x)), cerium oxide (TaO_(x)) or aluminum oxide (AlO_(x)). Thenitride can be aluminum nitride (AlN_(x)) or silicon nitride (SiN_(x)).The polymer can be polyimide or benzocyclobutane (BCB). In anembodiment, the first insulation portion 61 has a repeated stack of aninsulation layer with low refractive index and an insulation layer withhigh refractive index to form a distributed Bragg reflector (DBR).

FIG. 7 shows a cross-sectional view of a light-emitting element inaccordance with an embodiment of the present disclosure. FIG. 8 shows atop view of a carrier shown in FIG. 7. Referring to FIG. 7, thelight-emitting device 2000 has a light-emitting element 20 fixed to thecarrier 300 by the conductive layers 103, 104. Referring to FIG. 8, afirst contact 600, a second contact 620 and a second insulation portion610 between the first contact 600 and the second contact 620 are formedon the carrier 300. The outer surfaces of the first contact 600, thesecond contact 620, and the second insulation portion 610 aresubstantially coplanar with each other. The height of the first contact600, the height of the second contact 620, and the height of the secondinsulation portion 610 are substantially the same. The contours of thefirst contact 600, the second insulation portion 610, and the secondcontact 620 in a plane view shown in FIG. 8 are circles. The circlesform a concentric structure. The concentric structure has a center C2 ina plane view shown in FIG. 8. The second contact 620 has a radius R3measured from the center C2, and the second insulation portion 610 has aradius R4 measured from the center C2. In an embodiment, the center C2is overlapped with the geometric center of the carrier 300. In anotherembodiment, the narrowest width of the second insulation portion 610 islarger than 150 nm. In an embodiment, multiple light-emitting elements20 can be arranged on the carrier 300. To be more specific, several setsof first contact 600, second contact 620 and second insulation portion610 (separating the first contact 600 and the second contact 620) arearranged on the carrier 300. Therefore, the first contact 600 and thesecond contact 620 of one set are electrically connected to onelight-emitting element 20. Referring to FIG. 7, the light-emittingelement 20 is fixed to the carrier 300 by the conductive layers 103,104. The first electrode 60 of the light-emitting element 20 iselectrically connected to the first contact 600 by the conductive layer103, and the second electrode 62 is electrically connected to the secondcontact 620 by the conductive layer 104. The position of the firstinsulation portion 61 between the first electrode 60 and the secondelectrode 62 substantially matches that of the second insulation portion610 between the first contact 600 and the second contact 620. Thematerial of the conductive layer 103, 104 can be solder or anisotropicconductive paste (ACP). Referring to FIG. 7, the edges of the conductivelayers 103, 104 are curved. The position of the center C1 of the secondelectrode 62 substantially matches that of the center C2 of the secondcontact 620. In this embodiment, the contours of the first contact 600,the second contact 620 and the second insulation portion 610 aresubstantially circle. The radius R1 of the second electrode 62 is notlarger than the radius R4 of the second insulation portion 610 toprevent the electrode 62 from being electrically connected to the firstcontact 600 and electrically connected to the second contact 620 at thesame time. The radius R3 of the second contact 620 is not larger thanthe radius R2 of the first insulation portion 61 to prevent the secondcontact 620 from being electrically connected to the first electrode 60and electrically connected to the second electrode 62 at the same time.The two sides of the conductive layers 103, 104 are connected to thelight-emitting element 20 and the carrier 300 respectively. The adhesionstrength between conductive layer 103 and the first contact 600 and theadhesion strength between conductive layer 104 and the second contact620 are larger than the adhesion strength between the second insulationportion 610 and the conductive layers 103, 104 when the conductivelayers 103, 104 are directly connected to the second insulation portion610. The adhesion strength between conductive layer 103 and the firstelectrode 60 and the adhesion strength between conductive layer 104 andthe second electrode 62 are larger than the adhesion strength betweenthe first insulation portion 61 and the conductive layer 103, 104 whenthe conductive layer 103, 104 is directly connected to the firstinsulation portion 61. The outer surfaces of the first contact 600, thesecond contact 620, and the second insulation portion 610 aresubstantially coplanar with each other to match the surface of theelectrode portion 6 of the light-emitting element 20. In an embodiment,the thickness of the first electrode 60 is different from that of thesecond electrode 62. Correspondingly, the surfaces of the second contact620 and the second insulation portion 610 of the carrier 300 are moredepressed than the surface of the first contact 600 for accommodatingthe protruded electrode portion 6. The conductive layer 104 is furtherfilled in the depressed portion of the carrier 300. The second electrode62 can be electrically connected with the second contact 620 through theconductive layer 104, and the conductive layer 103 electrically connectsthe first electrode 60 and the first contact 600.

FIG. 9 shows a cross-sectional view of a light-emitting element inaccordance with an embodiment of the present disclosure. Thelight-emitting element 30 has a carrier 204, a first semiconductor layer201, a light-emitting layer 202, a second semiconductor layer 203, afirst electrode 80, a second electrode 82, and a depression portion 81between the first electrode 80 and the second electrode 82. The firstsemiconductor layer 201 is a first conductive type semiconductor layer,and the second semiconductor layer 203 is a second conductive typesemiconductor layer, wherein the first conductive type and the secondconductive type can be n-type and p-type or p-type and n-typerespectively. The first semiconductor layer 201 has a protruded portion201U. The light-emitting layer 202 is formed on the protruded portion201U to emit an incoherent light. In an embodiment, the top surface ofthe first semiconductor layer 201 is a substantially flat surface with aconstant height, and the light-emitting layer 202 is formed on thesubstantially flat surface. The first semiconductor layer 201 iselectrically connected to the first electrode 80, and the secondsemiconductor layer 203 is electrically connected to the secondelectrode 82. FIG. 10 shows a top view of the light-emitting element 30shown in FIG. 9. Referring to FIG. 10, the second electrode 82 has acircular contour, and the depressed portion 81 surrounding the secondelectrode 82 has a circular contour substantially the same with thecontour of the second electrode 82. The contours of the second electrode82 and the depressed portion 81 surrounding the second electrode 82 in aplane view shown in FIG. 10 are circles. The circles form a concentricstructure. The concentric structure has a center C3 in a plane viewshown in FIG. 10. The second electrode 82 has a radius R5 measured fromthe center C3, and the depressed portion 81 has a radius R6 measuredfrom the center C3. The depressed portion 81 has a substantially uniformwidth in a plane view as shown in FIG. 10. The light-emitting layer 202has substantially the same contour as the second electrode 82, and hasthe same circular shape. The light-emitting element 30 has a circularlight-emitting region. The contour of the first electrode 80 is notlimited to the contour shown in FIG. 10, and the contour of the firstelectrode 80 can be circular or other shape formed by a closed curveline. Moreover, air is filled in the depressed portion 81. In anembodiment, the narrowest width of the depressed portion 81 is largerthan 150 μm. In an embodiment, an insulating material is filled in thedepressed portion 81 to electrically isolate the first electrode 80 andother portions, such as the light-emitting layer 202, the secondsemiconductor layer 203 and the second electrode 82. The depressedportion 81 can be fully filled by the insulating material or only a partof the depressed portion 81 is covered by the insulating material. Forexample, the sidewall of the first electrode 80 close to thelight-emitting layer 202, the sidewall of the light-emitting layer 202close to the first electrode 80, the sidewall of the secondsemiconductor layer 203 close to the first electrode 80 and/or thesidewall of the second electrode 82 close to the first electrode 80 canbe covered by the insulating material in the depressed portion 81.

In an embodiment, the carrier 204 is an epitaxial growth substrate. Thematerial of the epitaxial growth substrate can be sapphire, GaN, Si, orSiC. It is suitable to form III-V or II-VI semiconductor materials onthe epitaxial growth substrate by the epitaxy growth technology, and thesemiconductor materials can be used as light-emitting layer. In anotherembodiment, the carrier 204 is not a growth substrate for growing thelight-emitting layer and is used as a support element for changing orholding the growth substrate. The support element can be a structurehaving a material, a composition or a contour different from that of thegrowth substrate.

Referring to FIG. 10, the light-emitting layer 202 has substantially thesame contour as the second electrode 82 and has a circular contour toprovide a circular light-emitting area. Therefore, the opticalcharacteristics of the light-emitting element 202 are substantially thesame in all directions, such as the light intensity, the dominantwavelength of the light from the light-emitting element 202 and/or thepeak wavelength of the light from the light-emitting element 202. Thecircular contour of the light-emitting layer 202 is also beneficial tomanufacturing. For example, during the process of fixing thelight-emitting element 30 to the carrier, the circular second electrode82 can be correctly connected to the conductive area on the carrier eventhe light-emitting element 30 rotates 45 degree from a predeterminedposition. Moreover, the first electrode 80 is not connected to theconductive region which is designed to be connected to the secondelectrode 82. On the contrary, if the contour of the electrode is notcircular (for example, the electrode 40, 42 shown in FIG. 1), theelectrode 40 and/or the electrode 42 may directly connect with thecontact 400 and the contact 402 at the same time to form a short circuitif the light-emitting element 10 rotates (for example, rotates 45 degreefrom its predetermined position), and the light-emitting element 10burns because of the short circuit.

FIG. 11 shows a cross-sectional view of a light-emitting element inaccordance with an embodiment of the present disclosure. FIG. 12 shows atop view of the carrier 301 shown in FIG. 11. The light-emitting device3000 has a light-emitting element 30 fixed to the carrier 301 by theconductive layers 105, 106. The details of the light-emitting element 30can be referred to relevant sections in the embodiments discussed above.No solid material is filled in the depressed portion 81, and air isfilled in the gap between the first semiconductor layer 201 and thecarrier 301. A first contact 800, a second contact 820, and the thirdinsulation portion 810 separating the first contact 800 and the secondcontact 820 are arranged on the carrier 301. The second electrode 82 iselectrically connected to the second contact 820 by the conductive layer106. The first electrode 80 is electrically connected to the firstcontact 800 by the conductive layer 105. The conductive layer 105 is notconnected with the conductive layer 106. The contour of the edge of theconductive layer 105 and that of the conductive layer 106 are curved ina side view.

Referring to FIG. 12, the contours of the first contact 800, the secondcontact 820 and the third insulation portion 810 surrounding the secondcontact 820 in a plane view shown in FIG. 12 are circles. The circlesform a concentric structure. The concentric structure has a center C4 ina plane view shown in FIG. 12. The second contact 820 has a radius R7measured from the center C4, and the third insulation portion 810 has aradius R8 measured from the center C4. The height of the first contact800, the height of the second contact 820 and the height of the thirdinsulation portion 810 are substantially the same. The top surfaces ofthe first contact 800, the second contact 820 and the third insulationportion 810 form a substantially flat surface. In an embodiment, thenarrowest width of the third insulation portion 810 is larger than 150μm. When the light-emitting element 30 is not correctly formed on thepredetermined position of the carrier 301, a distance d between thepredetermined position and the position the light-emitting element 30located is formed. If the distance d is smaller than the narrowest widthof the third insulation portion 810, no misconnection between the firstelectrode 80 and the second contact 820 or between the second electrode82 and the first contact 800 happens and the light-emitting device 3000functions properly. In another embodiment, multiple light-emittingelements 30 are arranged on the carrier 301. To be more specific,several sets of first contact 800, second contact 820 and thirdinsulation portion 810 (separating the first contact 800 and the secondcontact 820) are arranged on the carrier 301. Therefore, the firstcontact 800 and the second contact 820 of one set are electricallyconnected to one light-emitting element 30. Referring to FIG. 11, thelight-emitting element 30 is fixed to the carrier 301 by the conductivelayers 105, 106. The first contact 800 has a contour similar with thecontour of the second contact 820, the contour of the third insulationportion 810, and the contour of the second electrode 82. The contour canbe a circle. In another embodiment, the contour of the depressed portion81 and the contour of the second electrode 82 can be a rectangle, atriangle, a polygon or a closed curve. Referring to FIGS. 10, 11, 12,the radius R5 of the second electrode 82 is not larger than the radiusR8 of the third insulation portion 810 to avoid electrical connectionbetween the second electrode 82 and the first contact 800. The radius R7of the second contact 820 is not larger than the radius R6 of thedepressed portion 81 to avoid electrical connection between the firstelectrode 80 and the second contact 820. The two sides of the conductivelayers 105, 106 are connected to the light-emitting element 30 and thecarrier 301 respectively. The adhesion strength between conductive layer105 and the first contact 800 and the adhesion strength betweenconductive layer 106 and the second contact 820 are larger than theadhesion strength between that between the third insulation portion 810and the conductive layers 105, 106 when the conductive layers 105, 106are directly connected to the third insulation portion 810. In anembodiment, the adhesion strength between conductive layer 105 and thefirst electrode 80 and the adhesion strength between conductive layer106 and the second electrode 82 are larger than the adhesion strengthbetween that between the third insulation portion 810 and the conductivelayers 105, 106 when the conductive layers 105, 106 are directlyconnected to the third insulation portion 810. The outer surfaces of thefirst contact 800, the second contact 820, and the third insulationportion 810 are substantially coplanar with each other to match thesubstantially flat surface of the electrodes 80, 82 of thelight-emitting element 30. In an embodiment, the outer surfaces of thefirst contact 800, the second contact 820, and the third insulationportion 810 are more depressed or protruded than the surface of thecarrier 301 to match the surface profiles of the electrodes 80, 82, andthe contacts 800, 820 can be tightly connected to the electrodes 80, 82.

FIG. 13 shows a bottom view of a light-emitting element in accordancewith an embodiment of the present disclosure. The structure of thelight-emitting element 30′ is similar to that of the light-emittingelement 30, and relevant descriptions can be referred to paragraphs inprevious sections. The light-emitting element 30′ has a circularcontour. Referring to FIG. 13, the contours of the first electrode 80,the second electrode 82, and the depressed portion 81 of thelight-emitting element 30′ form a concentric structure. The contour ofthe light-emitting element 30′ and the contour of the light-emittinglayer (not shown) are also circular. Therefore, the optical propertiesof the light-emitting element 30′ in all directions are substantiallythe same. Besides, the first electrode 80 or the second electrode 82does not touch two contacts (for example, the first contact 800 andsecond contact 820 shown in FIG. 12) on a carrier (for example, thecarrier 301 shown in FIG. 12) at the same time so a short circuit can beavoided even if the light-emitting element 30′ is shifted when attachingthe light-emitting element 30′ to the carrier (for example, the carrier301 shown in FIG. 12).

FIG. 14 shows a cross-sectional view of a light-emitting element inaccordance with an embodiment of the present disclosure. Thelight-emitting device 4000 has a light-emitting element 30 fixed to thecarrier 301 through the conductive layer 107. A first contact 800, asecond contact 820, and the third insulation portion 810 separating thefirst contact 800 and the second contact 820 are arranged on the carrier301. The structure of the light-emitting device 4000 is similar withthat of the light-emitting device 3000, and the details of the structurecan be referred to relevant paragraphs in the previous embodimentsdiscussed above. It is noted, the conductive layer 107 is a continuouslayer connecting the first electrode 80 and the carrier 301, andconnecting the second electrode 82 and the carrier 301. The conductivelayer 107 has a first region 107A, a second region 107B, and a thirdregion 107C. The first region 107A electrically connects the firstelectrode 80 and the first contact 800 on the carrier 301. The secondregion 107B electrically connects the second electrode 82 and the secondcontact 820 on the carrier 301. The first region 107A and the secondregion 107B are separated from each other by the third region 107C. Tobe more specific, the first region 107A and the second region 107B haveconductive particles of sufficient concentration and quantity to form anelectrically connection between the light-emitting element 30 and theconductive region on the carrier 301 in a direction perpendicular to asurface of the carrier 301 connected to the conductive layer 107. Thethird region 107C has no conductive particles or has only a small amountof conductive particles not sufficient to form an electricallyconnection between the first region 107A and the second region 107B in adirection parallel to a surface of the carrier 301 connected to theconductive layer 107 or to form an electrically connection between thelight-emitting element 30 and the conductive region on the carrier 301in a direction perpendicular to a surface of the carrier 301 connectedto the conductive layer 107. The difference of the amount or theconcentration of conductive particles between the regions in theconductive layer 107 can be formed during manufacturing thelight-emitting device 4000. To be more specific, the conductiveparticles within the conductive layer 107 are separated uniformly whenthe conductive material of the conductive layer 107 are arranged on thecarrier 301 in the beginning of the process, and the conductiveparticles in the third region 107C moves toward the first region 107Aand the second region 107B during the process of heating or pressing theconductive material to be the conductive layer 107 while attaching thelight-emitting element 30 to the carrier 301. In another embodiment, thedifference of the amount or the concentration of conductive particlesbetween the regions in the conductive layer 107 is formed beforeattaching the light-emitting element 30 to the carrier 301. For example,the conductive layer 107 having different conductive particlesconcentrations is formed by forming a third region 107C having a lowerconductive particle concentration or smaller amount of conductiveparticles and a first region 107A and a second region 107B having higherconductive particle concentration or larger amount of conductiveparticles respectively in the beginning of the process. Therefore, theelectrical connection in a direction perpendicular to a surface of thecarrier 301 connected to the conductive layer 107 at specific regionshaving higher conductive particle concentration (for example, the firstregion 107A and the second region 107B) can be formed. Besides, theelectrical insulation between the specific regions (for example, betweenthe first region 107A and the second region 107B) in a directionparallel to a surface of the carrier 301 connected to the conductivelayer 107 can be formed at the third region 107C. In an embodiment, theheight of the conductive layer 107 is not uniform, and the third region107C is shorter than the first region 107A and the second region 107B.Referring to FIG. 14, the conductive layer 107 has a curved edge.

It will be apparent to those having ordinary skill in the art thatvarious modifications and variations can be made to the devices inaccordance with the present disclosure without departing from the scopeor spirit of the disclosure. In view of the foregoing, it is intendedthat the present disclosure covers modifications and variations of thisdisclosure provided they fall within the scope of the following claimsand their equivalents.

What is claimed is:
 1. A light-emitting device, comprising: alight-emitting element comprising a first electrode, and a secondelectrode fully surrounded by the first electrode; a carrier; a firstcontact arranged on the carrier to face the first electrode; a firstconductive layer electrically connecting the first contact and the firstelectrode; a second contact arranged on the carrier to face the secondelectrode, and surrounded by the first contact; and a second conductivelayer electrically connecting the second contact and the secondelectrode, wherein the first conductive layer and the first electrodeare not aligned with each other in their outermost boundaries, whereinthe second conductive layer and the second electrode are not alignedwith each other in their outermost boundaries, wherein, in a top view,the first electrode and the first contact have similar contours, andsecond electrode and the second contact have similar contours.
 2. Thelight-emitting device according to claim 1, wherein the first electrodeand the second electrode have similar contours.
 3. The light-emittingdevice according to claim 1, wherein the second electrode has a circularshape.
 4. The light-emitting device according to claim 1, wherein thefirst electrode has a circular shape.
 5. The light-emitting deviceaccording to claim 1, further comprising a first insulation portionarranged between the first electrode and the second electrode.
 6. Thelight-emitting device according to claim 5, wherein the first electrode,the second electrode, and the first insulation portion collectively havea planar bottom surface.
 7. The light-emitting device according to claim5, wherein the second electrode is surrounded by the first insulationportion.
 8. The light-emitting device according to claim 5, wherein thefirst electrode, the second electrode, and the first insulation portionare formed in a pattern of concentric circle.
 9. The light-emittingdevice according to claim 1, wherein the first electrode and the secondelectrode are formed in a pattern of concentric circle.
 10. Thelight-emitting device according to claim 1, wherein the first electrodeor the second electrode are not formed in a shape of rectangle.
 11. Thelight-emitting device according to claim 1, wherein the first electrodeis formed in a shape of rectangle.
 12. The light-emitting deviceaccording to claim 1, wherein the first conductive layer, the secondconductive layer, or both comprise Anisotropic Conductive film (ACF),Self Assembly Anisotropic Conductive Paste (SAP), or epoxy solder paste.13. The light-emitting device according to claim 1, wherein thelight-emitting element comprises a semiconductor stack, in the top view,the semiconductor stack and the second electrode have differentcontours.
 14. The light-emitting device according to claim 13, whereinthe semiconductor stack and the first electrode are not flush with eachother in their outermost boundaries.
 15. The light-emitting deviceaccording to claim 1, wherein the light-emitting element comprises asemiconductor stack, in the top view, the semiconductor stack and thesecond electrode have similar contours.
 16. The light-emitting deviceaccording to claim 15, wherein the semiconductor stack has a circularcontour in the top view.
 17. The light-emitting device according toclaim 1, wherein the first electrode and the second electrode havedifferent thicknesses.
 18. The light-emitting device according to claim1, further comprising a second insulation portion formed between thefirst conductive layer and the second conductive layer.
 19. Thelight-emitting device according to claim 18, wherein the secondconductive layer is surrounded by the second insulation portion.
 20. Thelight-emitting device according to claim 1, further comprising a thirdinsulation portion formed between the first contact and the secondcontact.